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P376 – 2″ UHV sputter deposition IFW


UHV sputter deposition system for thin film and multilayer deposition at 2″ substrates

Year of delivery


Installation site

IFW, Dresden, Germany

Design Features

  • UHV magnetron sputter deposition system with confocal sputter up configuration.
  • Up to four 2″ magnetrons with manual in situ tilting.
    • All magnetrons with easy changeable magnetic system for use with ferromagentic or non-ferromagnetic target materials.
  • Fully motorized 2 axes sample manipulator with integrated sample shutter, DC Bias potential option and maximal sample temperature well above 800°C.
  • Sample wedge shutter installed at chamber wall.
  • Integrated bake out system.

Special Features

  • Adding of moveable thickness monitor for sputter rate measurement before starting a deposition process possible.
  • Adding of load lock chamber with heating lamp option possible.
  • Adding of residual gas analyser system possible
  • System is prepared to be added to a cluster tool via second transfer port at the sputtering chamber.

Outer Dimensions

Technical specifications and performance values


Sputtering chamber


400 mm diameter, about 700 mm height


stainless steel


Sputtering chamber

Base pressure

< 2 *10-9 mbar

Pump down time

1.25 hours to < 10-7 mbar

Chamber pumping

Turbo pumping stage, chamber lid differentially pumped by dry foreline pump

Bake out

< 150°C

Manipulator features

Sputtering chamber

Sample size

diameter max. 2″ substrate

Motion axes

2 motorized axes (manipulator z translation and (continous) rotation of the sample stage)

Pneumatic sample shutter (part of the manipulator head)


Room temperature (not stabilized) up to 1000°C at sample

Special features

DC bias potential option

Performance test results

Chamber pump down
Long time sample heating