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P375 – 4″X8″ HV Ion beam etching HZB


HV ion beam etching system for surface structuring of max. 4″ x 8″ substrates

Year of delivery


Installation site

HZB, Berlin, Germany

Design Features

  • HV ion beam etching system with fine focus ion beam source.
  • Fully motorized 2 axes sample manipulator (x, y sample stage).
  • Lamp heating to about 150°C at the sample.

Special Features

  • Different sample sizes from 2″ wafer up to 4″ x 8″ samples can be handled.
  • Freely programmable sample motion in x-y plane (incl. speed profiles).

Outer Dimensions

Technical specifications and performance values


Etching chamber


About 620 mm width, about 1000 mm depth, about 420 mm height (D-shape chamber with door)


stainless steel


Sputtering chamber

Base pressure

< 5 *10-8 mbar

Pump down time

3 hours to < 5 * 10-7 mbar

Chamber pumping

Turbo pumping stage, chamber lid differentially pumped by dry foreline pump

Manipulator features

Sputtering chamber

Sample size

diameter max. 4″ x 8″ substrate

Motion axes

2 motorized axes (x tranlsation & y translation)


Room temperature up to 150°C at sample (not stabilized)

Special features

Freely programmable sample motion in x-y plane (incl. speed profiles)

Performance test results

Chamber pump down
Long time sample heating